, una. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon pnp power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2SA1329 description ? low collector saturation voltage :vce(satr -0.4(v)(max)@lc= -6a ? high switching speed ? complement to type 2sc3346 applications ? designed for high current switching applications. absolute maximum ratings(ta=25'c) pin lease 2.collector 3-better to-220c package symbol vcbo vceo vebo ic ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous base current-continuous total power dissipation @ tc=25'c junction temperature storage temperature range value -80 -80 -6 -12 -2 40 150 -55-150 unit v v v a a w c r f a*q u 1 t a ! i * h i k f t cl i ?^ -* ^ ? h din a b c d f g h j k l q r s u v b m v ij ' iry -?- fr |vd ?h m win 15.50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13.00 1.20 2.70 2.30 1.29 6.45 8.66 ? m max 15.90 10.20 4,50 0.90 3.70 5.18 2.90 0.80 13.40 1.4s 2.90 2.70 1.35 6.65 8.86 *s ?r* j rh nj semi-coiiductors reserves the right to change test conditions, parameter limits and package dimensions without notice. inrbnnation furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going lo press. i louever. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verify tiiat data.sheels are current before placing orders. quality semi-conductors
silicon pnp power transistor 2SA1329 electrical characteristics tc=25'c unless otherwise specified symbol v(br)ceo vce(sat) vee(sat) icbo iebo hpe-1 hfe-2 fi cob parameter collector-emitter breakdown voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain dc current gain current-gain ? bandwidth product output capacitance conditions lc= -50ma ; ib= 0 lc= -6a; ib= -0.3a lc= -6a; ib= -0.3a vcb= -80v ; ie= 0 veb= -6v; lc= 0 lc=-1a;vce=-1v lc=-6a;vce=-1v lc=-1a;vce=-5v le=0;vcb=-10v;ftes,= 1mhz min -80 70 40 typ. 50 400 max -0.4 -1.2 -10 -10 240 unit v v v |j a ua mhz pf switching times ton 'stg tf turn-on time storage time fall time rl=5n, ib1=-ib2=-0.3a, vcc- -30v; duty cycled 1% 0.3 1.0 0.5 u s u s m s hfe-i classifications 0 70-140 y 120-240
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